Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers
Carmine Borelli, A. Bosio, A. Parisini, M. Pavesi, Salvatore Vantaggio, R. Fornari
Topics & Concepts
PhotodetectorMaterials scienceOptoelectronicsUltravioletElectron mobilityElectrical resistivity and conductivityEpitaxyOrthorhombic crystal systemCarrier lifetimeDark currentSaturation (graph theory)OpticsSiliconPhysicsNanotechnologyCombinatoricsMathematicsLayer (electronics)Quantum mechanicsDiffractionGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides