Simulating Chern insulators on a superconducting quantum processor
Zhongcheng Xiang, Kaixuan Huang, Yu-Ran Zhang, Tao Liu, Yun‐Hao Shi, Cheng‐Lin Deng, Tong Liu, Hao Li, Gui-Han Liang, Zheng-Yang Mei, Haifeng Yu, Guangming Xue, Ye Tian, Xiaohui Song, Zhibo Liu, Kai Xu, Dongning Zheng, Franco Nori, Heng Fan
Abstract
The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with various configurations of Aubry-André-Harper chains and observe dynamical localisation of edge excitations. With these two signatures of topology, our experiments implement the bulk-edge correspondence in the synthetic 2D Chern insulator. Moreover, we simulate two different bilayer Chern insulators on the ladder-type superconducting processor. With the same and opposite periodically modulated on-site potentials for two coupled chains, we simulate topologically nontrivial edge states with zero Hall conductivity and a Chern insulator with higher Chern numbers, respectively. Our work shows the potential of using superconducting qubits for investigating different intriguing topological phases of quantum matter.