All‐in‐one perovskite memristor with tunable photoresponsivity
Guan‐Hua Dun, Yuanyuan Li, Hai‐Nan Zhang, Fan Wu, Xichao Tan, Ken Qin, Yichu He, Ze‐Shu Wang, Yu-hao Wang, Tian Lu, Shi‐Wei Tian, Dan Xie, Jiali Peng, Xiang‐Shun Geng, Xiaotong Zhao, Jiahe Zhang, Yu‐Han Zhao, Xiaoyu Wu, Xiaoyu Wu, Ning‐Qin Deng, Zhengqiang Zhu, Yan Li, Xian‐Zhu Liu, Xing Wu, Xing Wu, Weida Hu, Peng Zhou, Yang Chai, Mario Lanza, He Tian, Zhaoyi Yan, Tianling Ren
Abstract
Abstract Photoelectric memristors have shown great potential for future machine visions, via integrating sensing, memory, and computing (namely “all‐in‐one”) functions in a single device. However, their hard‐to‐tune photoresponse behavior necessitates extra function modules for signal encoding and modality conversion, impeding such integration. Here, we report an all‐in‐one memristor with Cs 2 AgBiBr 6 perovskite, where the Br vacancy doping‐endowed tunable energy band enables tunable photoresponsivity (TPR) behavior. As a result, the memristor showed a large tunable ratio of 35.9 dB, while its photoresponsivity presented a maximum of 2.7 × 10 3 mA W −1 and a long‐term memory behavior with over 10 4 s, making it suitable for realizing all‐in‐one processing tasks. By mapping the algorithm parameters onto the photoresponsivity, we successfully performed both recognition and processing tasks based on the TPR memristor array. Remarkably, compared with conventional complementary metal–oxide–semiconductor counterparts, our demonstrations provided comparable performance but had ~133‐fold and ~299‐fold reductions in energy consumption, respectively. Our work could facilitate the development of all‐in‐one smart devices for next‐generation machine visions. image