Observation of resonant exciton and correlated plasmon yielding correlated plexciton in amorphous silicon with various hydrogen content
Soni Prayogi, Retno Asih, Budhi Priyanto, Malik Anjelh Baqiya, Muhammad Avicenna Naradipa, Yoyok Cahyono, Darminto Darminto, Andrivo Rusydi
Abstract
Hydrogenated amorphous silicon (a-Si: H) has received great attention for rich fundamental physics and potentially inexpensive solar cells. Here, we observe new resonant excitons and correlated plasmons tunable via hydrogen content in a-Si: H films on Indium Tin Oxide (ITO) substrate. Spectroscopic ellipsometry supported with High Resolution-Transmission Electron Microscopy (HR-TEM) is used to probe optical properties and the density of electronic states in the various crystallinity from nano-size crystals to amorphous a-Si: H films. The observed optical and electronic structures are analyzed by the second derivative with analytic critical-point line shapes. The complex dielectric function shows good agreement with microscopic calculations for the energy shift and the broadening inter-band transitions based on the electron-hole interaction. Interestingly, we observe an unusual spectral weight transfer over a broad energy range revealing electronic correlations that cause a drastic change in the charge carrier density and determine the photovoltaic performance. Furthermore, the interplay of resonant excitons and correlated plasmons is discussed in term of a correlated plexciton. Our result shows the important role of hydrogen in determining the coupling of excitons and plasmons in a-Si: H film for photovoltaic devices.