A Design and Comparative Investigation of Graded Al <sub> <i>x</i> </sub> Ga <sub>1–</sub> <i> <sub>x</sub> </i> N EBL for W‐B <sub>0.375</sub> GaN/W‐B <sub>0.45</sub> GaN Edge Emitting Laser Diode on AlN Substrate
Mussaab I. Niass, Fang Wang, Yuhuai LIU
Abstract
In this paper, we numerically demonstrated the possibility of using wurtzite boron gallium nitride (W-BGaN) as active layers (quantum well and quantum barriers) along with aluminum gallium nitride (AlGaN) to achieve lasing at a deep ultraviolet range at 263 nm for edge emitting laser diode. The laser diode structure simulations were conducted by using the Crosslight-LASTIP software with a self-consistency model for varies quantity calculations. Moreover, multiple designed structures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also emphasized. As a result, a maximum emitted power of 26 W, a minimum threshold current of 308 mA, a slope efficiency of 2.82 W/A, and a minimum p-type resistivity of 0.228 Ω·cm from the different doping concentrations and geometrical distances were thoroughly observed and jotted down.