Entropy engineering enabled atomically dispersed Cu doping leading to an exceptionally high thermoelectric figure of merit in n-type lead chalcogenides
Ziling Yuan, Mengyue Wu, Shuai Han, Pengfei Liu, Zhen‐Hua Ge, Bangzhi Ge, Menghua Zhu, Yadong Xu, Wanqi Jie, Dongyao Zhao, Bingchao Yang, Yongsheng Zhang, Ming Liu, Min Zhu, Chao Li, Yuan Yu, Chongjian Zhou
Abstract
Entropy engineering fully dissolved extra Cu atoms into the interstitial lattice sites of lead chalcogenides, yielding high charge carrier mobility and ZT values in a wide temperature range.
Topics & Concepts
Figure of meritDopingThermoelectric effectMaterials scienceNanotechnologyEngineering physicsOptoelectronicsPhysicsThermodynamicsChalcogenide Semiconductor Thin FilmsPhase-change materials and chalcogenidesAdvanced Thermoelectric Materials and Devices