Criticality-enhanced electric field gradient sensor with single trapped ions
Theodoros Ilias, Dayou Yang, Susana F. Huelga, Martin B. Plenio
Abstract
Abstract We propose and analyze a driven-dissipative quantum sensor that is continuously monitored close to a dissipative critical point. The sensor relies on the critical open Rabi model with the spin and phonon degrees of freedom of a single trapped ion to achieve criticality-enhanced sensitivity. Effective continuous monitoring of the sensor is realized via a co-trapped ancilla ion that switches between dark and bright internal states conditioned on a ‘jump’ of the phonon population which, remarkably, achieves nearly perfect phonon counting despite a low photon collection efficiency. By exploiting both dissipative criticality and efficient continuous readout, the sensor device achieves highly precise sensing of oscillating electric field gradients at a criticality-enhanced precision scaling beyond the standard quantum limit, which we demonstrate is robust to the experimental imperfections in real-world applications.