Nucleation and growth of SiC at the interface between molten Si and graphite
Marco C. Martinez, Elias J. Munoz, Matthew B. Dickerson, Raymundo Arróyave, Miladin Radović
Topics & Concepts
Materials scienceNucleationDiffusionIsothermal processSinteringSilicon carbidePhase (matter)SiliconWork (physics)ThermodynamicsDissolutionChemical physicsChemical engineeringComposite materialMetallurgyChemistryPhysicsOrganic chemistryEngineeringAdvanced ceramic materials synthesisAluminum Alloys Composites PropertiesSilicon Carbide Semiconductor Technologies