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Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method

S. Preethi, N. B. Balamurugan

2020Silicon22 citationsDOI

Topics & Concepts

MOSFETPoisson's equationThreshold voltagePoisson distributionMaterials scienceDual (grammatical number)VoltageBoundary value problemElectronic engineeringElectrical engineeringMathematical analysisTransistorMathematicsEngineeringArtStatisticsLiteratureAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices
Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method | Litcius