Suppressing Carrier Recombination in BiVO<sub>4</sub>/PEDOT:PSS Heterojunction for High-Performance Photodetector
Zhe Liu, Jiaqi Li, Shaojie Liu, Yuan Yao, Ainong Chen, Haolin Yu, Shouxiong Wang, Jie Ding, Huajing Fang
Abstract
The organic–inorganic hybrid heterojunction is introduced for the first time to break through the performance bottleneck of BiVO 4 -based photodetectors. Through a facile solution process, a p-n heterojunction is established at the BiVO 4 /PEDOT:PSS interface, and the built-in electric field is designed to separate photogenerated charge carriers. The hybrid heterojunction outputs a significantly increased photocurrent, which is 24 000 times larger than that of the bare BiVO 4 thin film. The photodetector shows a satisfactory performance with a responsivity ( R ) and specific detectivity ( D *) of 107.8 mA/W and 4.13 × 10 10 Jones at 482 nm illumination. In addition to the fast response speed (100 ms), the device also exhibits an impressive long-term stability with a negligible attenuation in photocurrent after more than 700 cycles. This work provides a novel strategy to suppress carrier recombination of BiVO 4, and the coupling of metal oxides and organic semiconductors opens up a new avenue for fabricating high-performance photodetectors.