Numerical analysis of the dislocation density in n-type 4H-SiC
Sheng'ou Lu, Hongyu Chen, Wei Hang, Rong Wang, Julong Yuan, Xiaodong Pi, Deren Yang, Xuefeng Han
Abstract
Effective stress! By comparing the calculation and experimental results, a possible value of effective stress to evaluate the effect of nitrogen dopant on dislocation density is proposed.
Topics & Concepts
DislocationDopantMaterials scienceStress (linguistics)NitrogenType (biology)Condensed matter physicsCrystallographyComposite materialDopingOptoelectronicsChemistryPhysicsOrganic chemistryBiologyLinguisticsEcologyPhilosophySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesSilicon and Solar Cell Technologies