Ultralow dark current and high specific detectivity of Ga <sub>2</sub> O <sub>3</sub> -based solar-blind photodetector arrays realized <i>via</i> post-annealing in oxygen plasma
Lingjie Bao, Zheng Liang, Siliang Kuang, Bohan Xiao, Kelvin H. L. Zhang, Xiangyu Xu, Qijin Cheng
Abstract
A photodetector based on Ga 2 O 3 thin films via post-annealing in oxygen plasma features excellent overall performance with an ultralow dark current of 44 fA, a high specific detectivity of 1.45 × 10 16 Jones, a decay time of 58 ms, etc. (@20 V).
Topics & Concepts
PhotodetectorDark currentMaterials scienceAnnealing (glass)OptoelectronicsOxygenPlasmaThin filmNanotechnologyPhysicsComposite materialQuantum mechanicsGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides