A case of perfect convergence of light and heavy hole valence bands in SnTe: the role of Ge and Zn co-dopants
U. Sandhya Shenoy, K. D. Goutham, D. Krishna Bhat
Abstract
Remarkable engineering of the electronic structure of SnTe by co-doping Ge and Zn. The synergistic effect of the resonance level, increase in the band gap and perfect convergence of valence sub-bands with reduced thermal conductivity leads to enhanced TE performance.
Topics & Concepts
Valence bandValence (chemistry)DopingDopantBand gapCondensed matter physicsMaterials scienceConvergence (economics)Electronic structureAtomic physicsChemistryPhysicsQuantum mechanicsEconomicsEconomic growthAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties