Gate-Defined Accumulation-Mode Quantum Dots in Monolayer and Bilayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi mathvariant="normal">W</mml:mi><mml:mi>Se</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
Shiva Davari, J.T. Stacy, Alejandro M. Mercado, Jeremy Tull, Rabindra Basnet, K. C. Pandey, Kenji Watanabe, Takashi Taniguchi, Jin Hu, Hugh Churchill
Abstract
Devices based on few-layer transition-metal dichalcogenides are rapidly being developed for various quantum technologies, such as valleytronic qubits and quantum emitters. Gate-defined quantum dots provide an appealing platform for coherent control of individual valley pseudospins, but well-resolved, discrete energy levels are required. The authors report gate-defined quantum dots in monolayer and bilayer WSe${}_{2}$, small enough to allow observation of transport through discrete levels. These devices thus satisfy an essential requirement for the development of (opto)electronic qubits based on valley-pseudospin states.