Litcius/Paper detail

Photon color conversion enhancement of colloidal quantum dots inserted into a subsurface laterally-extended GaN nano-porous structure in an InGaN/GaN quantum-well template

Chen-Hua Chen, Sheng-Yang Kuo, His-Yu Feng, Zong-Han Li, Shaobo Yang, Shung-Hsiang Wu, Hao-Yu Hsieh, Yu‐Sheng Lin, Yueh-Chi Lee, Wei-Cheng Chen, Ping-Hsiu Wu, Junchen Chen, Yangyi Huang, You-Jui Lu, Yang Kuo, Chia‐Feng Lin, C. C. Yang

2023Optics Express14 citationsDOIOpen Access PDF

Abstract

To improve the color conversion performance, we study the nanoscale-cavity effects on the emission efficiency of a colloidal quantum dot (QD) and the Förster resonance energy transfer (FRET) from quantum well (QW) into QD in a GaN porous structure (PS). For this study, we insert green-emitting QD (GQD) and red-emitting QD (RQD) into the fabricated PSs in a GaN template and a blue-emitting QW template, and investigate the behaviors of the photoluminescence (PL) decay times and the intensity ratios of blue, green, and red lights. In the PS samples fabricated on the GaN template, we observe the efficiency enhancements of QD emission and the FRET from GQD into RQD, when compared with the samples of surface QDs, which is attributed to the nanoscale-cavity effect. In the PS samples fabricated on the QW template, the FRET from QW into QD is also enhanced. The enhanced FRET and QD emission efficiencies in a PS result in an improved color conversion performance. Because of the anisotropic PS in the sample surface plane, the polarization dependencies of QD emission and FRET are observed.

Topics & Concepts

Materials sciencePhotoluminescenceQuantum dotOptoelectronicsIndium gallium nitrideQuantum wellFörster resonance energy transferNanoscopic scaleQuantum efficiencyOpticsGallium nitrideNanotechnologyLaserFluorescenceLayer (electronics)PhysicsGaN-based semiconductor devices and materialsQuantum Dots Synthesis And PropertiesZnO doping and properties