Monolayer WS<sub>2</sub> Sub-5 nm Transistor for Future Technology Nodes: A Theoretical Study
Xiaotian Sun, Shibo Fang, Ge Zhang, Linqiang Xu, Yee Sin Ang, Shujing Zhu, Qiang Li, Xingyue Yang, Zongmeng Yang, Junfeng Li, Weizhou Wang, Zhigang Song, Jing Lu
Abstract
Motivated by realizing the excellent device performance of the 10 nm channel-length MoS 2 field-effect transistors [ Nature Electronics 2024, 7, 545–556], we explore the device performance limit of the monolayer (ML) WS 2 transistors in the sub-5 nm region through ab initio quantum transport simulations. We find that both the optimized n- and p-type ML WS 2 metal oxide semiconductor field-effect transistors (MOSFETs) can satisfy the key performance metrics for high-performance applications of the International Technology Roadmap (ITRS) when the gate length is reduced to 3 nm. In addition, the performance of both the n- and p-type ML WS 2 MOSFETs is better than that of the MoS 2 counterparts for high-performance applications. Notably, at a gate length of 5 nm, the key performance metrics of high-performance and low-power ML WS 2 devices show excellent n–p symmetry, indicating their potential for complementary metal oxide semiconductor (CMOS) applications. Our work indicates that the ML WS 2 is a promising candidate as a channel material for prolonging Moore’s law in the future.