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Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors

P. Murugapandiyan, D. Nirmal, J. Ajayan, Arathy Varghese, N. Ramkumar

2021Silicon20 citationsDOI

Topics & Concepts

High-electron-mobility transistorMaterials sciencePassivationTransconductanceOptoelectronicsHeterojunctionBreakdown voltageTransistorThreshold voltageVoltageElectrical engineeringNanotechnologyEngineeringLayer (electronics)GaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials
Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility Transistors | Litcius