Atomic layer deposition of LiF using LiN(SiMe<sub>3</sub>)<sub>2</sub> and SF<sub>6</sub> plasma
N. Hornsveld, W. M. M. Kessels, R. A. Synowicki, Mariadriana Creatore
Abstract
Lithium fluoride films were prepared by atomic layer deposition (ALD) using a new route in which LiN(SiMe<sub>3</sub>)<sub>2</sub> is used as a precursor and SF<sub>6</sub> plasma as a coreactant. It was demonstrated that SF<sub>6</sub> plasma is a promising coreactant for ALD of high purity lithium fluoride films.
Topics & Concepts
Atomic layer depositionLithium fluorideDeposition (geology)Lithium (medication)FluorideLayer (electronics)PlasmaChemistryAnalytical Chemistry (journal)Inorganic chemistryOrganic chemistryPhysicsMedicineSedimentEndocrinologyQuantum mechanicsPaleontologyBiologySemiconductor materials and devicesGaN-based semiconductor devices and materialsZnO doping and properties