Exploring defect behavior in helium-irradiated single-crystal and nanocrystalline 3C-SiC at 800°C: A synergy of experimental and simulation techniques
Zhiqiang Wang, Limin Zhang, A.T. AlMotasem, Bingsheng Li, Tomáš Polcar, N. Daghbouj
Topics & Concepts
Materials scienceNanoindentationStacking faultCrystallographic defectMicrostructureNanocrystalline materialStackingGrain boundaryIrradiationCrystallographyComposite materialDislocationNanotechnologyNuclear magnetic resonanceNuclear physicsPhysicsChemistryAdvanced ceramic materials synthesisSilicon Carbide Semiconductor TechnologiesMetal and Thin Film Mechanics