Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate
Minghui Zhang, Wei Wang, Shuwei Fan, Genqiang Chen, Haris Naeem Abbasi, Lin Fang, Feng Wen, Jingwen Zhang, Renan Bu, Renan Bu, Hongxing Wang
Topics & Concepts
TransconductanceMaterials scienceThreshold voltageDiamondOptoelectronicsField-effect transistorTransistorGate dielectricVoltageWork functionNegative-bias temperature instabilityAnalytical Chemistry (journal)Layer (electronics)Electrical engineeringNanotechnologyChemistryComposite materialEngineeringChromatographyDiamond and Carbon-based Materials ResearchMetal and Thin Film MechanicsSemiconductor materials and devices