Engineered interface states and optical absorption of β-Ga<sub>2</sub>O<sub>3</sub>/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles
Xiaoning Zhang, Xi Liang, Haoyu Dong, Jia‐Yue Yang, Linhua Liu
Abstract
Boundary oxygen vacancies decrease the bandgap of the β-Ga 2 O 3 /4H-SiC heterojunction, while interface oxygen vacancies create interface states at the interface.
Topics & Concepts
HeterojunctionMaterials scienceInterface (matter)OxygenIrradiationAbsorption (acoustics)OptoelectronicsBand gapComposite materialChemistryCapillary numberPhysicsCapillary actionNuclear physicsOrganic chemistryGa2O3 and related materialsElectronic and Structural Properties of OxidesZnO doping and properties