Highly Enhanced Polarization Switching Speed in HfO<sub>2</sub>‐based Ferroelectric Thin Films via a Composition Gradient Strategy
Puqi Hao, Shuaizhi Zheng, Binjian Zeng, Changyuan Yu, Zhibin Yang, Luocheng Liao, Qiangxiang Peng, Qijun Yang, Yichun Zhou, Min Liao
Abstract
Abstract The next‐generation semiconductor memories are essentially required for the advancements in modern electronic devices. Ferroelectric memories by HfO 2 ‐based ferroelectric thin films (FE‐HfO 2 ) have opened promising directions in recent years. Nevertheless, improving the polarization switching speed of FE‐HfO 2 remains a critical task. In this study, it is demonstrated that the composition‐graded Hf 1‐ x Zr x O 2 (HZO) ferroelectric thin film has more than two times faster polarization switching speed than the conventional composition‐uniform one. Meanwhile, it has excellent ferroelectricity and improved endurance characteristics. It is also discovered that when the HZO thin film has a gradient composition, the polarization‐switching dynamics shifts from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism. Moreover, the transition of switching dynamics is responsible for the faster speed and better endurance of the composition‐graded HZO thin film. These findings not only reveal the physical mechanisms of this material system but also provide a new strategy for memory devices having faster speed and higher endurance.