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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Debaleen Biswas, Takuya Tsuboi, Takashi Egawa

2021Materials Science in Semiconductor Processing12 citationsDOI

Topics & Concepts

Materials scienceOptoelectronicsHigh-electron-mobility transistorTransistorHeterojunctionThreshold voltageLeakage (economics)VoltageElectrical engineeringEconomicsEngineeringMacroeconomicsGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices
GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs) | Litcius