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Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure–temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk

A. Fakkahi, P. Başer, M. Jaouane, A. Sali, A. Ed‐Dahmouny, K. El‐Bakkari, R. Arraoui, H. Azmi

2024Physica B Condensed Matter18 citationsDOI

Topics & Concepts

GermaniumDopantImpuritySiliconMaterials scienceDopingRefractive indexQuantum dotAbsorption (acoustics)Condensed matter physicsOptoelectronicsAtomic physicsChemistryPhysicsOrganic chemistryComposite materialSemiconductor Quantum Structures and DevicesQuantum Dots Synthesis And PropertiesSemiconductor Lasers and Optical Devices
Central-cell corrections for hydrogenic, silicon (Si), selenium (Se), sulfur (S), and germanium (Ge) donor impurities and pressure–temperature effects on the optical properties of the GaAs/GaAlAs multi-layer quantum disk | Litcius