Highly Sensitive Cationic Photoresist for High‐Throughput Two‐Photon Nanofabrication
Zhiyuan Ma, Tianyi Li, Xiaoqiang Dai, Xiaoming Shen, Xiaobing Wang, Huan Fu, Xianmeng Xia, Qinyan Zhu, YinBo Zhu, Zhi‐Long Yu, Chun Cao, Shangting You, Cuifang Kuang
Abstract
Abstract Two‐photon lithography (TPL) is a powerful tool for 3D nanofabrication, however, high‐throughput TPL remains challenging, especially for cationic‐based photoresists. A novel cationic‐based photoresist named TP‐EO is developed for high‐throughput and high‐resolution TPL nanofabrication. High‐speed fabrication is achieved by using a bimolecular photosensitizer‐photo acid generator (PS‐PAG) pair that can effectively solve the photosensitivity bottleneck in cationic‐based photoresists. High‐resolution nanofabrication is achieved by limiting the photoacid diffusion via tuning the monomer's intra‐ and inter‐molecular stereo‐structure. The fabrication of 3D structures is demonstrated with fine features (<200 nm), fast writing speed (100 mm s −1 ), and low shrinkage, and showcased the rapid fabrication of centimeter‐scale nanodevices. TP‐EO photoresist shows outstanding TPL fabrication speed and resolution among cationic‐based photoresists, making it a promising solution for high‐throughput 3D nanomanufacturing.