Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress
Alexis A. Gómez, Juan R. García-Meré, Alberto Rodríguez, Juan Rodríguez, Carlos Jiménez, Jaume Roig-Guitart
Abstract
This work compares Silicon Carbide (SiC) MOSFET electrical degradation, with special focus on the threshold voltage, under Gate Switching Stress (GSS) and Application Switching Stress (ASS) tests. For this purpose, a dedicated setup has been developed and utilized to dynamically stress devices under different conditions. Remarkably, the degradation differs between GSS and ASS, thus being more pronounced in the latter case. An explanation based on TCAD simulation analysis is provided along with a methodology to adapt GSS testing to obtain hard-switching real application results.
Topics & Concepts
MOSFETStress (linguistics)Degradation (telecommunications)Materials scienceLogic gateOptoelectronicsEngineering physicsElectronic engineeringElectrical engineeringTransistorEngineeringVoltageLinguisticsPhilosophySilicon Carbide Semiconductor TechnologiesSemiconductor materials and interfacesSilicon and Solar Cell Technologies