(Na<sub>0.74</sub>Ag<sub>1.26</sub>)BaSnS<sub>4</sub>: A New AgGaS<sub>2</sub>‐Type Nonlinear Optical Sulfide with a Wide Band Gap and High Laser Induced Damage Threshold
Wenfeng Zhou, Wenlong Liu, Sheng‐Ping Guo
Abstract
Abstract The development of high‐power solid‐state lasers is in urgent need of infrared (IR) nonlinear optical (NLO) materials with wide band gaps and high laser‐induced damage thresholds (LIDTs). Herein, a new compressed chalcopyrite‐like IR NLO crystal (Na 0.74 Ag 1.26 )BaSnS 4 was successfully synthesized using a facile high‐temperature solid‐state method. Its structure can be considered as a variant of chalcopyrite AgGaS 2 (AGS)‐type ones. It features a three‐dimensional framework constructed by corner‐sharing {[(Na/Ag)S 4 ] 7− } ∞ layers and isolated SnS 4 tetrahedra with negative cavities occupied by counter ion Ba 2+ . (Na 0.74 Ag 1.26 )BaSnS 4 exhibits phase‐matchable moderate SHG response (0.31 × AGS), wide band gap (3.70 eV), and high LIDT (6.44 × AGS). Theoretical calculations reveal that the NLO response of (Na 0.74 Ag 1.26 )BaSnS 4 is mainly originated from the synergetic effects of AgS 4 and SnS 4 tetrahedra, and the inclusion of alkaline and alkaline earth metals is responsible for the wide band gap and high LIDT. Moreover, the discovery of this chalcopyrite‐like compound will provide a feasible design strategy for the exploration of new promising IR NLO materials.