All van der Waals Semiconducting PtSe<sub>2</sub> Field Effect Transistors with Low Contact Resistance Graphite Electrodes
Muhammad Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi, Dayu Yan, Youguo Shi, Theresia Knobloch, Michael Waltl, Udo Schwingenschlögl, Tibor Grasser, Aleksandar Matković
Abstract
High Resolution Image Download MS PowerPoint Slide Contact resistance is a multifaceted challenge faced by the 2D materials community. Large Schottky barrier heights and gap-state pinning are active obstacles that require an integrated approach to achieve the development of high-performance electronic devices based on 2D materials. In this work, we present semiconducting PtSe 2 field effect transistors with all-van-der-Waals electrode and dielectric interfaces. We use graphite contacts, which enable high I ON / I OFF ratios up to 10 9 with currents above 100 μA μm –1 and mobilities of 50 cm 2 V –1 s –1 at room temperature and over 400 cm 2 V –1 s –1 at 10 K. The devices exhibit high stability with a maximum hysteresis width below 36 mV nm –1 . The contact resistance at the graphite–PtSe 2 interface is found to be below 700 Ω μm. Our results present PtSe 2 as a promising candidate for the realization of high-performance 2D circuits built solely with 2D materials.