Suppressing photoexcited electron–hole recombination in MoSe<sub>2</sub>/WSe<sub>2</sub> lateral heterostructures <i>via</i> interface-coupled state engineering: a time-domain <i>ab initio</i> study
Zhaobo Zhou, Yehui Zhang, Xiwen Zhang, Xianghong Niu, Guangfen Wu, Jinlan Wang
Abstract
Interface-coupled states play a vital role in photoexcited carrier lifetime of two-dimensional lateral heterostructure-based photovoltaic and photoelectric devices.
Topics & Concepts
HeterojunctionPhotoelectric effectAb initioInterface (matter)ElectronMaterials scienceDomain (mathematical analysis)Time domainRecombinationOptoelectronicsCondensed matter physicsMolecular physicsAtomic physicsPhysicsChemistryComputer scienceQuantum mechanicsMathematical analysisMathematicsGeneComputer visionBiochemistryComposite materialCapillary actionCapillary number2D Materials and ApplicationsQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films