Charge carrier mobilities of organic semiconductors: ab initio simulations with mode-specific treatment of molecular vibrations
Sebastian Hutsch, Michel Panhans, Frank Ortmann
Abstract
Abstract The modeling of charge transport in organic semiconductors usually relies on the treatment of molecular vibrations by assuming a certain limiting case for all vibration modes, such as the dynamic limit in polaron theory or the quasi-static limit in transient localization theory. These opposite limits are each suitable for only a subset of modes. Here, we present a model that combines these different approaches. It is based on a separation of the vibrational spectrum and a quantum-mechanical treatment in which the slow modes generate a disorder landscape, while the fast modes generate polaron band narrowing. We apply the combined method to 20 organic crystals, including prototypical acenes, thiophenes, benzothiophenes, and their derivatives. Their mobilities span several orders of magnitude and we find a close agreement to the experimental mobilities. Further analysis reveals clear correlations to simple mobility predictors and a combination of them can be used to identify high-mobility materials.