High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study
C. Sivamani, P. Murugapandiyan, A. Mohanbabu, A.S. Augustine Fletcher
Topics & Concepts
TransconductanceHigh-electron-mobility transistorMaterials scienceBuffer (optical fiber)Breakdown voltageOptoelectronicsBuffer amplifierElectrical engineeringLeakage (economics)VoltageTransistorEngineeringAmplifierCMOSEconomicsMacroeconomicsGa2O3 and related materialsGaN-based semiconductor devices and materialsZnO doping and properties