Electroresistance in multipolar antiferroelectric Cu2Se semiconductor
Hui Bai, Jinsong Wu, Xianli Su, Haoyang Peng, Zhi Li, Dongwang Yang, Qingjie Zhang, Ctirad Uher, Xinfeng Tang
Abstract
Abstract Electric field-induced changes in the electrical resistance of a material are considered essential and enabling processes for future efficient large-scale computations. However, the underlying physical mechanisms of electroresistance are currently remain largely unknown. Herein, an electrically reversible resistance change has been observed in the thermoelectric α -Cu 2 Se. The spontaneous electric dipoles formed by Cu + ions displaced from their positions at the centers of Se-tetrahedrons in the ordered α -Cu 2 Se phase are examined, and α -Cu 2 Se phase is identified to be a multipolar antiferroelectric semiconductor. When exposed to the applied voltage, a reversible switching of crystalline domains aligned parallel to the polar axis results in an observed reversible resistance change. The study expands on opportunities for semiconductors with localized polar symmetry as the hardware basis for future computational architectures.