Enhanced Photoresponse in Few-Layer SnS<sub>2</sub> Field-Effect Transistors Modified with Methylammonium Lead Iodide Perovskite
Michael J. Loes, Alexey Lipatov, Nataliia S. Vorobeva, Haidong Lu, Jehad Abourahma, Dmitry S. Muratov, Alexei Gruverman, Alexander Sinitskii
Abstract
We demonstrate that decoration with methylammonium lead iodide perovskite (MAPbI 3 ) nanoparticles is an efficient approach to engineer strong visible light photoresponse in electronic devices based on two-dimensional (2D) materials with limited optical absorptivity. This approach was demonstrated using 2D SnS 2, a promising electronic material with a band gap of about 2.3 eV and poor absorption in the visible range of spectrum. Field-effect transistors based on pristine 2D SnS 2 show an n-type transport with high on–off ratios. Decoration with isolated MAPbI 3 nanoparticles qualitatively retains the transfer characteristics of the devices but dramatically increases their photoresponse in the entire visible range of the spectrum. In particular, the photoresponse of the MAPbI 3 -decorated devices to the red light is entirely engineered by the perovskite modification of SnS 2, which by itself does not absorb in the red region of the spectrum. The MAPbI 3 -decorated SnS 2 devices exhibit stable, reproducible photoswitching over numerous cycles with response times of no longer than 12 ms. An analysis of a MAPbI 3 –SnS 2 heterostructure by Kelvin probe force microscopy resulted in an energy level diagram suggesting a transfer of the photoexcited electrons in MAPbI 3 to the conduction band of the n-type SnS 2 channel. The photoresponse characteristics of the perovskite-modified SnS 2 devices were shown to be consistent with the intrinsic optical properties of MAPbI 3 . The described perovskite decoration approach should be applicable to engineering photoresponse in a variety of other devices based on 2D electronic materials with low optical absorptivity.