High Efficiency Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> Solar Cells with Shallow Li<sub>Zn</sub> Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment
Mingrui He, Xian Zhang, Jialiang Huang, Jianjun Li, Chang Yan, Jihun Kim, Jihun Kim, Yi‐Sheng Chen, Limei Yang, Julie M. Cairney, Yu Zhang, Shiyou Chen, Jin Hyeok Kim, Jin Hyeok Kim, Martin A. Green, Xiaojing Hao
Abstract
Abstract Lithium incorporation in kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials has been experimentally proven effective in improving electronic quality for application in photovoltaic devices. Herein, a feasible and effective solution‐based lithium post‐deposition treatment (PDT), enabling further efficiency improvement on the high‐performance baseline is reported and the dominant mechanism for this improvement is proposed. In this way, lithium is uniformly incorporated into grain interiors (GIs) without segregation at grain boundaries (GBs), which can occupy the Zn sites with a high solubility in the CZTSSe matrix, producing high density of Li Zn antisites with shallower acceptor levels than the intrinsic dominant defect (Cu Zn antisites). As a result, CZTSSe absorber with better p‐type doping is obtained, leading to a pronounced enhancement in fill factor and a corresponding gain in open‐circuit voltage and short‐circuit current and consequently a significant efficiency boost from 9.3% to 10.7%. This work provides a feasible alternative alkali‐PDT treatment for chalcogenide semiconductors and promotes a better understanding of the mechanism of Li incorporation in kesterite materials.