Band alignment of <i>β</i>-(AlxGa1−x)2O3 alloys via atomic solid-state energy scale approach
Yuichi Ota
Abstract
We presented a simple estimation method for band alignment of semiconductor alloys based on the atomic solid-state energy (SSE) scale. Our method has the advantage that natural band alignment can be determined using the SSE and energy gap of materials. We investigated several examples of the valence band offset and conduction band offset for β-(AlxGa1−x)2O3 related heterostructures, and our results were in good agreement with previous experimental data. These results indicated that simple and practical prediction of the band offset and alignment of ionic bonded semiconductors can be attained.
Topics & Concepts
Band offsetMaterials scienceBand gapHeterojunctionSemiconductorOffset (computer science)Atomic unitsWide-bandgap semiconductorElectronic band structureIonic bondingValence bandConduction bandAtomic physicsCondensed matter physicsAnalytical Chemistry (journal)Molecular physicsOptoelectronicsChemistryIonPhysicsElectronProgramming languageChromatographyOrganic chemistryQuantum mechanicsComputer scienceGa2O3 and related materialsZnO doping and propertiesSemiconductor materials and devices