Carrier–Phonon Interaction Induced Large Negative Thermal‐Optic Coefficient at Near Band Edge of Quasi‐2D (PEA)<sub>2</sub>PbBr<sub>4</sub> Perovskite
Sheng‐Chan Wu, Chun‐Sheng Wu, Ching‐Hang Chien, Zhang Yu-wei, Chung-Xian Yang, Cheng Liu, Ming‐Hsien Li, Chen‐Fu Lin, Yu‐Hao Wu, Bi‐Hsuan Lin, Yu-Hsun Chou, Yia‐Chung Chang, Peter Chen, Hsu‐Cheng Hsu
Abstract
Abstract The soft and polar nature of quasi‐2D (PEA) 2 PbBr 4 perovskite, and robust photo‐generated excitons lead exciton‐polaritons and exciton‐polarons as the important phenomena near the band edge for application in the lighting aspect. In this work, a convenient methodology is proposed based on the polariton resonant modes in temperature‐dependent (77 K to RT) spectroscopy, and investigate the effect of these quasi‐particles on refractive index dispersion. The large binding energy (≈335 meV) of quasi‐2D excitons is obtained by the reflectance measurements at 77 K. Stable exciton‐polaritons and exciton‐polarons are confirmed by energy dispersions and the observation of self‐trapped exciton‐polaron state, respectively. Furthermore, the large negative thermal‐optic coefficient due to damping effect of exciton‐phonon scattering is observed. The phenomenon is opposite to those observed in conventional semiconductors (e.g., Si, Ge, GaN, AlN, GaAs, AlAs, and ZnO etc.). The observed stable negative thermal‐optic coefficients from 160 K to RT indicate that the quasi‐2D perovskite can be used as a phase compensator for conventional semiconductor materials.