Role of Vacancy Defects and Nitrogen Dopants for the Reduction of Oxygen on Graphene
Weizhe Zhang, Bas van Dijk, Longfei Wu, Clément Maheu, Viorica Tudor, Jan P. Hofmann, Lin Jiang, Dennis G. H. Hetterscheid, Grégory F. Schneider
Abstract
High Resolution Image Download MS PowerPoint Slide Disentangling the roles of nitrogen dopants and vacancy defects (VG) in metal-free carbon catalysts for the oxygen reduction reaction (ORR) ideally requires studying both the dopants and defects separately. Here, we systematically introduced nitrogen dopants and VGs via plasma treatment into the basal plane of monolayer graphene as a model carbon catalyst to investigate their specific roles in ORR catalysis. An increased defect density including dopants is positively associated with boosted ORR activity. Nitrogen dopants are responsible for an improved current via a 2e – pathway generating hydroperoxide, while VGs result in enhanced kinetics and water production. We therefore infer that VGs in graphene are responsible for the improved ORR kinetics, while nitrogen dopants majorly influence the selectivity of ORR reaction products. The nitrogen dopants without VGs lead to a higher overpotential compared with the pristine graphene. Instead of the attribution of the ORR active site to only nitrogen species in carbon materials, the improved ORR activity in nitrogen-doped carbon materials should be attributed to the active sites constituted of VGs, oxygen dopants, and nitrogen dopants. Through this work, we provide important insights into the intertwined roles of nitrogen and VGs as well as oxygen dopants in nitrogen-doped metal-free catalysts for a more efficient ORR.