Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs
Philipp Döring, R. Driad, Richard Reiner, Patrick Waltereit, Stefano Leone, M. Mikulla, O. Ambacher
Abstract
In this work, multi-finger current aperture vertical electron transistors (CAVETs) are fabricated with co-integrated high electron mobility transistors (HEMTs). The devices are realized by Mg-ion implantation and metalorganic chemical vapor deposition (MOCVD) regrowth. The intrinsic CAVET design is optimized for robust device performance and applied on multi-finger devices having a total gate periphery of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{{\text {G}}} =13.5$ </tex-math></inline-formula> mm and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{{\text {G}}} =77$ </tex-math></inline-formula> mm. Mappings of the transfer characteristics revealed reliable turn-off behavior demonstrating the suitability of the intrinsic device layout. The largest CAVETs revealed a total ON-state resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON}} = 1.67\,\,\Omega $ </tex-math></inline-formula> and a maximum drain current of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{{\text {D},\text {MAX}}} =20.3$ </tex-math></inline-formula> A at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}} = {3}$ </tex-math></inline-formula> V. A pulse robustness of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {PULS}} =976$ </tex-math></inline-formula> W at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {DS}} =50$ </tex-math></inline-formula> V and a pulsewidth of 500 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{s}$ </tex-math></inline-formula> is shown without thermal destruction. Additionally, HEMTs are co-integrated on-chip. This combination of HEMTs and reliable large area CAVETs enables the design of high-performance, monolithically integrated GaN power circuits (GaN power ICs) based on the CAVET technology.