Determination of Grain-Boundary Structure and Electrostatic Characteristics in a SrTiO<sub>3</sub> Bicrystal by Four-Dimensional Electron Microscopy
Chao Yang, Yi Wang, Wilfried Sigle, Peter A. van Aken
Abstract
compensates a positive charge accumulated at the GB, which is in agreement with the double-Schottky-barrier model. It demonstrates the feasibility of characterizing the electrostatic properties at the nanometer scale by 4D-STEM, which provides comprehensive insights to understanding the GB structure and its concomitant effects on the electrostatic properties.
Topics & Concepts
Grain boundaryAtomic unitsScanning transmission electron microscopyChemical physicsTransmission electron microscopyElectrostaticsValence (chemistry)Materials scienceCharacterization (materials science)ElectronNanotechnologyCondensed matter physicsChemistryCrystallographyMicrostructurePhysicsPhysical chemistryOrganic chemistryQuantum mechanicsElectronic and Structural Properties of OxidesSemiconductor materials and devicesSurface and Thin Film Phenomena