An analytical approach of elimination of ambipolarity of DPDG- TFET using strained type II staggered SiGeSn heterostructure
Namrata Shaw, Gopa Sen, Bratati Mukhopadhyay
Topics & Concepts
HeterojunctionQuantum tunnellingBand gapOptoelectronicsMaterials scienceField-effect transistorTransistorPhysicsVoltageQuantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure AnalysisNanowire Synthesis and Applications