Defect Passivation via Dual-Interface Synergistic Modulation in Perovskite Solar Cells
Chunyan Deng, Yuqian Yang, Jihuai Wu, Lina Tan, Fengli Liu, Yitian Du, Qi Chen, Xia Chen, Liuxue Sun, Weihai Sun, Jianming Lin, Yiming Xie, Zhang Lan, Yang Bai, Antonio Abate
Abstract
The interfaces between the selective contacts and the perovskite are crucial for carrier collection in perovskite solar cells (PSCs), significantly affecting the devices’ performance and stability. This study introduces a dual interface synergistic modulation approach to improve the efficiency and stability of PSCs. The bottom interface modifier, 1,4-diaminobutane (DAB), helps create active sites that facilitate the attachment of another modifier on the perovskite film’s surface. Through these DAB-induced active sites, 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethylsiloxane (BTS) can effectively passivate native defects and prevent surface degradation of the perovskite materials. By utilizing DAB and BTS for a dual interface synergistic passivation strategy, we achieve an impressive efficiency of 25.92% (certified at 25.13%) and demonstrate remarkable continuous operational stability with a T90 lifetime exceeding 700 h.