Low-loss GaN-on-insulator platform for integrated photonics
M. Gromovyi, M. El Kurdi, X. Checoury, Étienne Herth, Farsane Tabataba‐Vakili, Nagesh Bhat, Aimeric Courville, F. Sèmond, P. Boucaud
Abstract
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultra-violet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material on SiO 2 is achieved through wafer bonding. We show that quality factors up to 230 000 can be achieved with this platform at telecommunication wavelengths. Resonant second harmonic generation is demonstrated with a continuous wave conversion efficiency of 0.24%/W.
Topics & Concepts
PhotonicsOptoelectronicsMaterials scienceSilicon on insulatorWaferSecond-harmonic generationSilicon photonicsPhotonic integrated circuitWaveguideWavelengthNonlinear opticsWafer bondingSemiconductorOpticsSiliconLaserPhysicsPhotonic and Optical DevicesAdvanced Fiber Laser TechnologiesPhotorefractive and Nonlinear Optics