Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier
Hailiang Dong, Tiantian Jia, Jian Liang, Aiqin Zhang, Zhigang Jia, Wei Jia, Xuguang Liu, Guoqiang Li, Yucheng Wu, Bingshe Xu
Topics & Concepts
Materials scienceOptoelectronicsQuantum wellElectroluminescenceBand offsetAuger effectSpontaneous emissionLight-emitting diodeCurrent densityBarrier layerDiodeRectangular potential barrierElectronElectronic band structureBand gapLayer (electronics)OpticsValence bandCondensed matter physicsPhysicsNanotechnologyLaserQuantum mechanicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties