New Insights into the Impact of Hydrogen Evolution on the Reliability of IGZO FETs: Experiment and Modeling
Qiwen Kong, Gan Liu, Chen Sun, Zijie Zheng, Dong Zhang, Jishen Zhang, Haiwen Xu, Long Liu, Zuopu Zhou, Leming Jiao, Xiaolin Wang, Kaizhen Han, Yuye Kang, Bich-Yen Nguyen, Kai Ni, Xiao Gong
Abstract
In this work, we report a comprehensive and deep understanding of the impact of hydrogen evolution on the reliability of the Indium-Gallium-Zinc-oxide (IGZO) FETs with HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gate dielectric. We innovate in combining negative bias stress (NBS) and positive bias temperature instability (PBTI) and discover: (1) two distinct H states $(H^{P}$ and $H^{N})$, which can be differentiated under different stress and recovery conditions; (2) strong channel length $(L_{ch})$ dependence of threshold voltage shift $(\Delta V_{th})$ under NBS; (3) a unified specific energy density $(E_{s})$ to quantify the transition time from the electron-trapping-dominated region to the H-dominated region. We propose a unique feedback mechanism between the H evolution and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> to explain the dramatic V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> drop in the H-dominated region. We further develop a physics-based model considering the electron trapping, H evolution, and feedback mechanism, leading to an excellent agreement between our modeled results and the measured data.