Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification
Sandip Mondal
Abstract
Abstract The solution-processed thin-film transistors (TFTs) have become the core requirement for the flexible and transparent electronics industry since they are fabricated using cost-effective techniques. However, the fabrication of low-dimensional TFTs by the solution-processing technique is still a challenge due to the surface contact resistance ( ρ c ). The current study introduces a controllable ρ c involving the effect of dimensions (channel width/length = W / L ) on TFTs. The ρ c was measured to be 2.04 × 10 9 µ m VA −1 when the channel length ( L ) of the TFT was 40 µ m. A substantial drop in the surface contact resistance to 1.8 × 10 8 µ m VA −1 was found with L = 5 µ m. Thus, a 91% control on ρ c was obtained when L reduced to 40 µ m from 5 µ m. Such a controllable ρ c was observed with respect to different dimensions of the TFTs. Indeed, an extreme control was obtained in the drain saturation current from 8 µ A to 0.8 µ A with respect to variation in dimension ( W / L ) from 15 to 2.5.