Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage
Songyang Lv, Shouzhi Wang, Tailin Wang, Lei Liu, Jiaoxian Yu, Tianran Dong, Guodong Wang, Zhongxin Wang, Chang Liang, Lili Li, Xiangang Xu, Lei Zhang
Abstract
Vacancy-modified few-layered GaN crystal as an advanced electrode for IL-based SC devices, which is applied to high-temperature energy storage field for the first time. And the device exhibits superior energy storage capability at 150 °C.
Topics & Concepts
Vacancy defectMaterials scienceEnergy storageCrystal (programming language)ElectrodeEnergy (signal processing)High energyOptoelectronicsCrystallographyEngineering physicsChemistryThermodynamicsPhysicsComputer sciencePhysical chemistryPower (physics)Quantum mechanicsProgramming languageZnO doping and propertiesGa2O3 and related materialsGaN-based semiconductor devices and materials