Analysis of Cell Current with Abnormal Channel Profile in 3D NAND Flash Memory
Jae Wook Lee, Yungjun Kim, Yoocheol Shin, S. B. Park, Daewoong Kang, Myounggon Kang
Abstract
This letter presents an in-depth investigation of the channel profile and cell current analysis of abnormal vertical 3D NAND flash memory. By utilizing 3D (technology computer-aided design) TCAD simulation, the channel profile was designed with an oxide-nitride-oxide (O/N/O) structure, providing insights into its impact on device performance. The I<SUB>D</SUB>-V<SUB>DS</SUB> curve was measured after setting the Vth target in the program state, enabling the analysis of the cell current. Additionally, the E-field of the tunneling oxide was considered to gain a comprehensive understanding of the device behavior. Based on the analysis results, the structure most vulnerable to cell current in vertical 3D NAND flash memory has been identified.