Advances in Gallium Oxide: Properties, Applications, and Future Prospects
Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul
Abstract
Abstract The traditional domination of silicon (Si) in device fabrication is increasingly infiltrated by state‐of‐the‐art wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC). However, the performance of these wide bandgap semiconductors has not yet exceeded the optical material limitation, which leaves ample room for further development. Gallium oxide (Ga 2 O 3 ) has surfaced as the preferred material for next‐generation device fabrication, as it has a wider bandgap (≈4.5–5.7 eV), an estimated twofold greater breakdown field strength of 8 MV cm −1 , and a higher Baliga's figure of merit(BFOM) (>3000) than SiC and GaN, therefore pushing the limit. In this review, the properties of gallium oxide, several methods for epitaxial growth, its energy band, and its broad spectrum of applications are discussed. Metals for achieving different types of contact and the influence of interfacial reactions are additionally assessed. Furthermore, defects and challenges such as p‐type doping, integration with heterostructures, the formation of superlattices, and thermal management associated with the use of this material are also reviewed.