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UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications

S. Baskaran, M. Shunmugathammal, C. Sivamani, S. Ravi, P. Murugapandiyan, N. Ramkumar

2022Silicon20 citationsDOI

Topics & Concepts

Materials scienceTransconductanceHigh-electron-mobility transistorOptoelectronicsBreakdown voltageSilicon carbideSubstrate (aquarium)TransistorGallium nitrideElectrical engineeringVoltageNanotechnologyGeologyOceanographyMetallurgyEngineeringLayer (electronics)Ga2O3 and related materialsGaN-based semiconductor devices and materialsZnO doping and properties
UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications | Litcius