Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization
Aapurva Kaul, Snehlata Yadav, Sonam Rewari, Deva Nand
Topics & Concepts
Leakage (economics)Field-effect transistorNanowireFerroelectricityMaterials scienceCondensed matter physicsTransistorMetal gateMinificationMetalOptoelectronicsPhysicsMathematicsGate oxideQuantum mechanicsMathematical optimizationMetallurgyEconomicsVoltageDielectricMacroeconomicsFerroelectric and Negative Capacitance DevicesAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices